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BL3N60 - N-Channel Power Mosfet

Datasheet Summary

Features

  • VDS = 600V , ID = 3A.
  • RDS(ON) =3.6Ω@ VGS = 10V.
  • Ultra low gate charge ( typical 10 nC ) Pb Lead-free.
  • Ultra low gate charge ( typical 10 nC ).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness Production specification BL3N60.

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Datasheet Details

Part number BL3N60
Manufacturer GME
File Size 476.26 KB
Description N-Channel Power Mosfet
Datasheet download datasheet BL3N60 Datasheet
Additional preview pages of the BL3N60 datasheet.

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Full PDF Text Transcription

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3A,600V N-Channel Power Mosfet FEATURES  VDS = 600V , ID = 3A  RDS(ON) =3.6Ω@ VGS = 10V  Ultra low gate charge ( typical 10 nC ) Pb Lead-free  Ultra low gate charge ( typical 10 nC )  Fast switching capability  Avalanche energy specified  Improved dv/dt capability, high ruggedness Production specification BL3N60 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS Gate -Source voltage ID Continuous Drain Current IDM EAS EAR dv/dt PD RθJA TJ Pulsed Drain Current Avalanche Energy Single Pulsed Repetitive Peak Diode Recovery dv/dt Power Dissipation Thermal resistance,Junction-to-Ambient Junction Temperature TOPR, Tstg Operating and Storage Temperature TO-220AB Value 600 ±30 3.0 12 200 7.5 4.
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