BL3N60 Datasheet | Galaxy Microelectronics

3A,600V N-Channel Power Mosfet Features - VDS = 600V , ID = 3A - RDS(ON) =3.6Ω@ VGS = 10V - Ultra low gate charge ( typical 10 nC ) Pb Lead-free - Ultra low gate charge ( typical 10 nC ) - Fast switching capability - Avalanche energy specified - Improved dv/dt capability, high ruggedness Production specification MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS Gate -Source voltage ID Continuous Drain Current IDM EAS EAR dv/dt RθJA Pulsed Drain Current Avalanche Energy Single Pulsed Repetitive Peak Diode Recovery dv/dt Power Dissipation Thermal resistance,Junction-to-Ambient Junction Temperature TOPR,...