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BL3N60 Datasheet N-Channel Power Mosfet

Manufacturer: Galaxy Microelectronics

Overview: 3A,600V N-Channel Power Mosfet.

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Key Features

  • VDS = 600V , ID = 3A.
  • RDS(ON) =3.6Ω@ VGS = 10V.
  • Ultra low gate charge ( typical 10 nC ) Pb Lead-free.
  • Ultra low gate charge ( typical 10 nC ).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness Production specification BL3N60.

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