BL3N65
BL3N65 is manufactured by Galaxy Microelectronics.
3A,650V N-Channel Power Mosfet
Features
- RDS(ON) =3.8Ω@ VGS = 10V
- Ultra low gate charge ( typical 10 nC )
Pb
Lead-free
- Low reverse transfer Capacitance ( CRSS = typical 5.5 pF )
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
Production specification
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
VDSS
Drain-Source voltage
VGSS
Gate -Source voltage
ID Continuous Drain Current
IDM EAS EAR dv/dt
RθJA
Pulsed Drain Current
Avalanche Energy
Single Pulsed Repetitive
Peak Diode Recovery dv/dt
Power Dissipation
Thermal resistance,Junction-to-Ambient
Junction Temperature
TOPR, Tstg...
