Datasheet4U Logo Datasheet4U.com

BL3N65 - N-Channel Power Mosfet

Datasheet Summary

Features

  • RDS(ON) =3.8Ω@ VGS = 10V.
  • Ultra low gate charge ( typical 10 nC ) Pb Lead-free.
  • Low reverse transfer Capacitance ( CRSS = typical 5.5 pF ).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness Production specification BL3N65.

📥 Download Datasheet

Datasheet preview – BL3N65

Datasheet Details

Part number BL3N65
Manufacturer GME
File Size 478.77 KB
Description N-Channel Power Mosfet
Datasheet download datasheet BL3N65 Datasheet
Additional preview pages of the BL3N65 datasheet.

📁 Similar Datasheet

  • BL3N100E - Power MOSFET (BELLING)
  • BL3N90E - Power MOSFET (BELLING)
  • BL3085A - RS-485 Transceivers (BELLING)
  • BL3085B - RS-485 Transceivers (BELLING)
  • BL3085E - High-speed transceiver (BELLING)
  • BL3090 - RS-485/RS-422 Transceivers (BELLING)
  • BL3102 - COMS Clock Generator/Driver (SHANGHAI BELLING)
  • BL317 - HIGH CURRENT ADJUSTABLE VOLTAGE REGULATOR (BELLING)
  • BL317B - HIGH CURRENT ADJUSTABLE VOLTAGE REGULATOR (BELLING)
  • BL317L - 3-TERMINAL ADJUSTABLE OUTPUT POSITIVE VOLTAGE REGULATOR (BELLING)
Other Datasheets by GME
  • BL3N60 - N-Channel Power Mosfet
  • BL3N80 - N-Channel Power Mosfet
  • BL3400 - N-Channel Power Mosfet
  • BL3401 - P-Channel High Density Trench MOSDET
  • BL3401L - P-Channel MOSDET
  • BL3402 - N-Channel Power Mosfet
  • BL3404 - N-Channel Power Mosfet
  • BL3407 - P-Channel Power Mosfet

Full PDF Text Transcription

Click to expand full text
3A,650V N-Channel Power Mosfet FEATURES  RDS(ON) =3.8Ω@ VGS = 10V  Ultra low gate charge ( typical 10 nC ) Pb Lead-free  Low reverse transfer Capacitance ( CRSS = typical 5.5 pF )  Fast switching capability  Avalanche energy specified  Improved dv/dt capability, high ruggedness Production specification BL3N65 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS Gate -Source voltage ID Continuous Drain Current IDM EAS EAR dv/dt PD RθJA TJ Pulsed Drain Current Avalanche Energy Single Pulsed Repetitive Peak Diode Recovery dv/dt Power Dissipation Thermal resistance,Junction-to-Ambient Junction Temperature TOPR, Tstg Operating and Storage Temperature TO-220AB Value 650 ±30 3.0 12 200 7.5 4.5 75 62.
Published: |