BL3N80 Datasheet | Galaxy Microelectronics

N-Channel Enhancement Mode MOSFET BL3N80 Features - Proprietary new planar technology - Low gate charge minimize switching loss - Fast recovery body diode - RoHS pliant with Halogen-free Mechanical Data - Case: TO-220AB - Molding pound: UL Flammability Classification Rating 94V-0 - Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 TO-220AB Ordering Information Part Number BL3N80 Package TO-220AB Shipping Quantity 50 pcs / Tube Marking Code 3N80 Maximum Ratings (@ TC = 25°C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current Pulsed Drain Current (VGS = 10V) - 1 Single Pulse Avalanche Energy -...