BL6N60 Datasheet | Galaxy Microelectronics

FEATURES - Fast Switching. - Low ON Resistance(Rdson≤1.7Ω). Pb Lead-free - Low Gate Charge(Typical Data:19n C). - Low Reverse transfer capacitances(Typical:8p F). - 100% Single Pulse avalanche energy Test. Applications: - Power switch circuit of adaptor and charger. Production specification TO-220AB MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage VGSS Gate -Source voltage ±30 ID Continuous Drain Current IDM Pulsed Drain Current a1 EAS Single Pulse Avalanche Energy a2 Power Dissipation Derating Factor above 25°C 83 0.67 RθJA Junction-to-Ambient RθJC Junction-to-Case TL Maximum Temperature for Soldering TJ Junction Temperature +150 Tstg Operating and Storage...