Datasheet4U Logo Datasheet4U.com

BL6N65F - N-Channel Power Mosfet

Key Features

  • RDS(ON) =1.7Ω@ VGS = 10V.
  • Ultra low gate charge ( typical 20 nC ) Pb Lead-free.
  • Low reverse transfer Capacitance ( CRSS = typical 10 pF ).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness Production specification BL6N65F.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BL600 smartBASIC Module User Manual Laird Technologies
BL602 Wi-Fi + BLE combo chipset Bouffalo Lab
BL604 Wi-Fi + BLE combo chipset Bouffalo Lab
BL6121 Infrared remote control transmitter SHANGHAI BELLING
BL6122 Infrared remote control transmitter SHANGHAI BELLING

Other Datasheets by Galaxy Microelectronics

Part Number Description
BL6N65 N-Channel Power Mosfet
BL6N65D N-Channel Power Mosfet
BL6N65I N-Channel Power Mosfet
BL6N60 N-Channel Power Mosfet
BL6N70 N-Channel Power Mosfet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
6A,650V N-Channel Power Mosfet FEATURES  RDS(ON) =1.7Ω@ VGS = 10V  Ultra low gate charge ( typical 20 nC ) Pb Lead-free  Low reverse transfer Capacitance ( CRSS = typical 10 pF )  Fast switching capability  Avalanche energy specified  Improved dv/dt capability, high ruggedness Production specification BL6N65F MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS Gate -Source voltage ID Continuous Drain Current IDM EAS EAR dv/dt PD RθJA TJ Pulsed Drain Current Avalanche Energy Single Pulsed Repetitive Peak Diode Recovery dv/dt Power Dissipation Thermal resistance,Junction-to-Ambient Junction Temperature TOPR, Tstg Operating and Storage Temperature ITO-220AB Value 650 ±30 6.2 24.8 440 13 4.5 40 62.