BL6N65I Datasheet | Galaxy Microelectronics

FEATURES - RDS(ON) =1.7Ω@ VGS = 10V - Ultra low gate charge ( typical 20 n C ) Pb Lead-free - Low reverse transfer Capacitance ( CRSS = typical 10 p F ) - Fast switching capability - Avalanche energy specified - Improved dv/dt capability, high ruggedness Production specification BL6N65I/BL6N65D MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS IDM EAS EAR dv/dt Gate -Source voltage Continuous Drain Current Pulsed Drain Current Avalanche Energy Single Pulsed Repetitive Peak Diode Recovery dv/dt PD Power Dissipation RθJA Thermal resistance,Junction-to-Ambient TJ Junction Temperature TOPR, Tstg Operating and Storage Temperature TO-251 TO-252 Value 650 ±30 6.2 24.8 440 13 4.5 40 62.5 +150 -55 to +150 Units V V A A m J V/ns W ℃/W ℃ ℃ S066 Rev.A .gmesemi. Production specification 6A,650V N-Channel Power Mosfet BL6N65I/BL6N65D...