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BL6N65I - N-Channel Power Mosfet

Key Features

  • RDS(ON) =1.7Ω@ VGS = 10V.
  • Ultra low gate charge ( typical 20 nC ) Pb Lead-free.
  • Low reverse transfer Capacitance ( CRSS = typical 10 pF ).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness Production specification BL6N65I/BL6N65D.

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Other Datasheets by Galaxy Microelectronics

Part Number Description
BL6N65 N-Channel Power Mosfet
BL6N65D N-Channel Power Mosfet
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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6A,650V N-Channel Power Mosfet FEATURES  RDS(ON) =1.7Ω@ VGS = 10V  Ultra low gate charge ( typical 20 nC ) Pb Lead-free  Low reverse transfer Capacitance ( CRSS = typical 10 pF )  Fast switching capability  Avalanche energy specified  Improved dv/dt capability, high ruggedness Production specification BL6N65I/BL6N65D MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS ID IDM EAS EAR dv/dt Gate -Source voltage Continuous Drain Current Pulsed Drain Current Avalanche Energy Single Pulsed Repetitive Peak Diode Recovery dv/dt PD Power Dissipation RθJA Thermal resistance,Junction-to-Ambient TJ Junction Temperature TOPR, Tstg Operating and Storage Temperature TO-251 TO-252 Value 650 ±30 6.2 24.8 440 13 4.5 40 62.