BL6N70 Datasheet | Galaxy Microelectronics

FEATURES - RDS(ON)=1.6Ω @ VGS=10V, ID=3A - Low gate charge (Typically 51n C) - Low CRSS (Typically 45p F) - High switching speed. Production specification MAXIMUM RATINGS (TC=25°C, unless otherwise specified) Symbol Parameter TO-220AB Value Unit VDS Drain-Source Voltage 700 V VGS ID IDM EAS EAR RθJA RθJC Tj Tstg Gate -Source Voltage Drain Current Continuous at Drain Current(pulsed)Note1 TC=25℃ TC=100°C Power Dissipation Linear Derarting Factor Avalanche Energy(Single Pulsed (Note 3)) Avalanche Energy (Repetitive(Note 2)) Thermal Resistance,Junction-to-Ambient Thermal Resistance,Junction-to-Case Junction and Storage Temperature Range ±30 V 6 A 4 24 A 100 W 1.04 W/℃ 100 m J 13 m J 62.5 ℃/W 0.96 ℃/W -55 to +150 ℃ S058 Rev.A .gmesemi. Production specification N-Channel Power MOSFET Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute...