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BL6N70 - N-Channel Power Mosfet

Key Features

  • RDS(ON)=1.6Ω @ VGS=10V, ID=3A.
  • Low gate charge (Typically 51nC).
  • Low CRSS (Typically 45pF).
  • High switching speed. Production specification BL6N70.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel Power MOSFET FEATURES  RDS(ON)=1.6Ω @ VGS=10V, ID=3A  Low gate charge (Typically 51nC)  Low CRSS (Typically 45pF)  High switching speed. Production specification BL6N70 MAXIMUM RATINGS (TC=25°C, unless otherwise specified) Symbol Parameter TO-220AB Value Unit VDS Drain-Source Voltage 700 V VGS ID IDM PD EAS EAR RθJA RθJC Tj Tstg Gate -Source Voltage Drain Current Continuous at Drain Current(pulsed)Note1 TC=25℃ TC=100°C Power Dissipation Linear Derarting Factor Avalanche Energy(Single Pulsed (Note 3)) Avalanche Energy (Repetitive(Note 2)) Thermal Resistance,Junction-to-Ambient Thermal Resistance,Junction-to-Case Junction and StorageTemperature Range ±30 V 6 A 4 24 A 100 W 1.04 W/℃ 100 mJ 13 mJ 62.5 ℃/W 0.96 ℃/W -55 to +150 ℃ S058 Rev.A www.gmesemi.