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BL6N65D - N-Channel Power Mosfet

Download the BL6N65D datasheet PDF. This datasheet also covers the BL6N65I variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • RDS(ON) =1.7Ω@ VGS = 10V.
  • Ultra low gate charge ( typical 20 nC ) Pb Lead-free.
  • Low reverse transfer Capacitance ( CRSS = typical 10 pF ).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness Production specification BL6N65I/BL6N65D.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BL6N65I-GME.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Galaxy Microelectronics

Part Number Description
BL6N65 N-Channel Power Mosfet
BL6N65F N-Channel Power Mosfet
BL6N65I N-Channel Power Mosfet
BL6N60 N-Channel Power Mosfet
BL6N70 N-Channel Power Mosfet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
6A,650V N-Channel Power Mosfet FEATURES  RDS(ON) =1.7Ω@ VGS = 10V  Ultra low gate charge ( typical 20 nC ) Pb Lead-free  Low reverse transfer Capacitance ( CRSS = typical 10 pF )  Fast switching capability  Avalanche energy specified  Improved dv/dt capability, high ruggedness Production specification BL6N65I/BL6N65D MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS ID IDM EAS EAR dv/dt Gate -Source voltage Continuous Drain Current Pulsed Drain Current Avalanche Energy Single Pulsed Repetitive Peak Diode Recovery dv/dt PD Power Dissipation RθJA Thermal resistance,Junction-to-Ambient TJ Junction Temperature TOPR, Tstg Operating and Storage Temperature TO-251 TO-252 Value 650 ±30 6.2 24.8 440 13 4.5 40 62.