BL6N70F Datasheet | Galaxy Microelectronics

FEATURES - RDS(ON)=1.6Ω @ VGS=10V, ID=3A - Low gate charge (Typically 51n C) - Low CRSS (Typically 45p F) - High switching speed. Production specification ITO-220AB MAXIMUM RATINGS (TC=25°C, unless otherwise specified) Symbol Parameter Value VDS Drain-Source Voltage Unit V VGS ID IDM EAS EAR RθJA RθJC Tj Tstg Gate -Source Voltage Drain Current Continuous at Drain Current(pulsed)Note1 ±30 TC=25℃ 6 TC=100°C 4 Power Dissipation Linear Derarting Factor Avalanche Energy(Single Pulsed (Note 3)) 100 W 1.04 W/℃ 100 m J Avalanche Energy (Repetitive(Note 2)) 13 m J Thermal Resistance,Junction-to-Ambient 62.5 ℃/W Thermal Resistance,Junction-to-Case 0.96 ℃/W Junction and Storage Temperature Range -55 to +150 ℃ S058 Rev.A .gmesemi. Production specification N-Channel Power MOSFET Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged....