BL6N80F Datasheet | Galaxy Microelectronics

FEATURES - 6A, 800V, RDS(on) = 2.5Ω @VGS = 10 V - Improved dv/dt Capability - Fast Switching - 100% Avalanche Tested Pb Lead-free Production specification ITO-220AB MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS Gate -Source voltage IDM EAS EAR dv/dt Continuous Drain Current Pulsed Drain Current Avalanche Energy Peak Diode Recovery dv/dt Single Pulsed Repetitive PD Power Dissipation θJA Junction to Ambient θJC Junction to Case TJ Junction Temperature TOPR, Tstg Operating and Storage Temperature Value 800 ±30 6 22 680 15.8 4.5 51 62.5 +150 -55 to +150 Units V V A A m J V/ns W ℃/W ℃/W ℃ ℃ S075 Rev.A .gmesemi. Production specification 6A,800V N-Channel Power Mosfet ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise...