GT1003B - MOSFET

Description

The GT1003B uses advanced trench technology and design to provide excellent RDS(ON), low gate charge.

This device is suitable for use in high frequency Synchronousrecification application.

Features

@ 10V (Typ) 100V 115mΩ 7A.
High density cell design for ultra low Rdson.
Lead free product is acquired.
Excellent package for good heat dissipation.
RoHS Compliant.

📥 Download Datasheet

GT1003B MOSFET by GOFORD - Datasheet Preview — Datasheet preview – GT1003B

Datasheet Details

Part number	GT1003B
Manufacturer	GOFORD
File Size	641.35 KB
Description	MOSFET
Datasheet	GT1003B Datasheet
Additional preview pages of the GT1003B datasheet.

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Full PDF Text Transcription

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GOFORD GT1003B Description The GT1003B uses advanced trench technology and design to provide excellent RDS(ON), low gate charge. This device is suitable for use in high frequency Synchronousrecification application.

Published: Nov 14, 2024 |