GT1003B - MOSFET

General Description

The GT1003B uses advanced trench technology and design to provide excellent RDS(ON), low gate charge.

This device is suitable for use in high frequency Synchronousrecification application.

Key Features

@ 10V (Typ) 100V 115mΩ 7A.
High density cell design for ultra low Rdson.
Lead free product is acquired.
Excellent package for good heat dissipation.
RoHS Compliant.

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GT1003B mosfet by GOFORD - Datasheet Preview

Datasheet Details

Part number	GT1003B
Manufacturer	GOFORD
File Size	641.35 KB
Description	MOSFET
Datasheet	GT1003B Datasheet

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GOFORD GT1003B Description The GT1003B uses advanced trench technology and design to provide excellent RDS(ON), low gate charge. This device is suitable for use in high frequency Synchronousrecification application.