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GT125N10 Datasheet MOSFET

Manufacturer: GOFORD

General Description

GT125N10 use advanced SFGMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics.

This device is specially designed to get better ruggedness and suitable to use in motor control applications.

Overview

GOFORD GT125N10  General.

Key Features

  • Low RDS(on) & FOM.
  • Extremely low switching loss.
  • Excellent stability and uniformity.
  • Fast switching and soft recovery.
  • RoHS Compliant VDSS RDS(ON) ID @10V (Typ. ) 100V 4.1 mΩ 130A.