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GT58N12 - MOSFET

Description

GT58N12 use advanced technology to provide low R DS(ON), low gate charge, fast switching and e xc e lle nt avalan ch e characteristics.

Thi s device is specially designed to get better ruggedness and suitable to use in motor control applications.

Features

  • Low RDS(on) & FOM.
  • Extremely low switching loss.
  • Excellent stability and uniformity.
  • Fast switching and soft recovery.
  • RoHS Compliant.

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Datasheet preview – GT58N12

Datasheet Details

Part number GT58N12
Manufacturer GOFORD
File Size 4.47 MB
Description MOSFET
Datasheet download datasheet GT58N12 Datasheet
Additional preview pages of the GT58N12 datasheet.

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Full PDF Text Transcription

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GOFORD Description GT58N12 use advanced technology to provide low R DS(ON), low gate charge, fast switching and e xc e lle nt avalan ch e characteristics. Thi s device is specially designed to get better ruggedness and suitable to use in motor control applications. General Features ● Low RDS(on) & FOM ● Extremely low switching loss ● Excellent stability and uniformity ● Fast switching and soft recovery ● RoHS Compliant Application ● Consumer electronic power supply ● Motor control ● Synchronous-rectification ● Isolated DC/DC convertor ● Invertors GT58N12 VDSS RDS(ON) RDS(ON) @4.
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