• Part: GL9401A
  • Description: NPN SILICON PLANAR MEDIUM POWER high gain TRANSISTOR
  • Category: Transistor
  • Manufacturer: GTM
  • Size: 495.77 KB
Download GL9401A Datasheet PDF
GTM
GL9401A
GL9401A is NPN SILICON PLANAR MEDIUM POWER high gain TRANSISTOR manufactured by GTM.
Description Features ISSUED DATE :2006/11/20 REVISED DATE : NPN SI L I CO N PL AN AR MEDI UM PO W ER HI G H G AI N T RANSI ST O R The GL9401A is designed for general purpose switching and amplifier applications. 5 Amps continuous current, up to 20Amps pulse current Low saturation voltages High Gain Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0° 10° 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13° TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC ICM PD Ratings +150 -55~+150 80 30 5 5 20 2.5 Unit V V V A A W - The power which can be dissipated assuming the device is mounted in typical manner on a PCB with copper equal to 2 inches x 2 inches. Electrical Characteristics (Ta = 25 Symbol Min. 80 80 30 80 5 280 300 300 180 , unless otherwise stated) Typ. - Max. 10 10 10 60 100 250 330 1.05 1.0 1200 - Unit V V V V V n A n A n A m V m V m V m V V V Test Conditions IC=100u A , IE=0 IC=100u A IC=10m A, IB=0 IC=10u A, VEB=1V IE=100u A ,IC=0 VCB=35V, IE=0 VCES=35V VEB=4V, IC=0 IC=500m A, IB=10m A IC=1A, IB=10m A IC=3A, IB=30m A IC=5A, IB=50m A IC=5A, IB=50m A VCE=2V, IC=5A VCE=2V, IC=10m A VCE=2V, IC=0.5A VCE=2V, IC=1A VCE=2V, IC=5A BVCBO - BVCES BVCEO BVCEV BVEBO ICBO ICES IEBO - VCE(sat)1 - VCE(sat)2 - VCE(sat)3 - VCE(sat)4 - VBE(sat) -...