• Part: GL9411A
  • Description: PNP SILICON PLANAR MEDIUM POWER high gain TRANSISTOR
  • Category: Transistor
  • Manufacturer: GTM
  • Size: 469.75 KB
Download GL9411A Datasheet PDF
GTM
GL9411A
GL9411A is PNP SILICON PLANAR MEDIUM POWER high gain TRANSISTOR manufactured by GTM.
Description Features The GL9411A is designed for general purpose switching and amplifier applications. 4 Amps continuous current, up to 10Amps pulse current Low saturation voltages High Gain ISSUED DATE :2006/11/20 REVISED DATE : PNP SI L I CO N PL AN AR MEDI UM PO WE R HI G H G AI N T RANSI ST O R Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0° 10° 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13° TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings at Ta = 25 Parameter Symbol Tj Tstg VCBO VCEO VEBO IC ICM PD Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Total Power Dissipation Ratings +150 -55~+150 -30 -25 -5 -4 -10 2.5 Unit V V V A A W - The power which can be dissipated assuming the device is mounted in typical manner on a PCB with copper equal to 2 inches x 2 inches. Electrical Characteristics (Ta = 25 Symbol Min. -30 -25 -25 -25 -5 270 250 195 115 , unless otherwise stated) Typ. - Max. -100 -100 -100 -80 -170 -240 -260 -350 -1.05 1.0 800 - Unit V V V V V n A n A n A m V m V m V m V m V V V Test Conditions IC=-100u A , IE=0 IC=-100u A IC=-10m A, IB=0 IC=-100u A, VEB=1V IE=-100u A ,IC=0 VCB=-24V, IE=0 VCES=-20V VEB=-4V, IC=0 IC=-100m A, IB=-1m A IC=-500m A, IB=-3m A IC=-1A, IB=-7m A IC=-2A, IB=-30m A IC=-4A, IB=-140m A IC=-4A, IB=-140m A VCE=-2V, IC=-4A VCE=-2V, IC=-10m A VCE=-2V, IC=-0.5A VCE=-2V, IC=-2A VCE=-2V, IC=-5A BVCBO BVCES - BVCEO BVCEV BVEBO ICBO ICES IEBO - VCE(sat)1 - VCE(sat)2 - VCE(sat)3 - VCE(sat)4 - VCE(sat)5 - VBE(sat) - VBE(on) - h...