• Part: GL949
  • Description: PNP SILICON PLANAR HIGH CURRENT TRANSISTOR
  • Category: Transistor
  • Manufacturer: GTM
  • Size: 478.28 KB
Download GL949 Datasheet PDF
GTM
GL949
GL949 is PNP SILICON PLANAR HIGH CURRENT TRANSISTOR manufactured by GTM.
Description Features ISSUED DATE :2006/11/20 REVISED DATE : PNP SI L I CO N PL AN AR HI G H C URRE NT T RANSI ST O R The GL949 is designed for general purpose switching and amplifier applications. 6Amps continuous current, up to 20Amps pulse current Very low saturation voltages Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0° 10° 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13° TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings at Ta = 25 Parameter Symbol Tj Tstg VCBO VCEO VEBO IC ICM PD Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Total Power Dissipation Ratings +150 -55~+150 -50 -30 -6 -5.5 -20 3 Unit V V V A A W - The power which can be dissipated assuming the device is mounted in typical manner on a PCB with copper equal to 2 inches x 2 inches. Electrical Characteristics (Ta = 25 Symbol Min. -50 -50 -30 -6 100 100 75 - , unless otherwise stated) Typ. 35 100 122 Max. -50 -50 -10 -75 -140 -270 -440 -1.25 -1.06 300 - Unit V V V V n A n A n A m V m V m V m V V V Test Conditions IC=-100u A , IE=0 IC=-1u A, RB 1k IC=-10m A, IB=0 IE=-100u A ,IC=0 VCB=-40V, IE=0 VCB=-40V, R 1k VEB=-6V, IC=0 IC=-500m A, IB=-20m A IC=-1A, IB=-20m A IC=-2A, IB=-200m A IC=-5.5A, IB=-500m A IC=-5.5A, IB=-500m A VCE=-1V, IC=-5.5A VCE=-1V, IC=-10m A VCE=-1V, IC=-1A VCE=-1V, IC=-5A VCE=-2V, IC=-20A VCE=-10V, IC=-100m A, f=50MHz VCB=-10V, IE=0, f=1MHz BVCBO BVCER BVCEO BVEBO ICBO ICER IEBO - VCE(sat)1 - VCE(sat)2 - VCE(sat)3 - VCE(sat)4 - VBE(sat) - VBE(on) - h FE1 - h...