GL9575 Datasheet | GTM

Description Features Package Dimensions SOT-223 REF. A C D E I H .. Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.70 6.30 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings -60 25 -4.0 -3.2 -20 3 0.02 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient Symbol Max. Rthj-a Value 45 Unit /W Page: 1/4 ISSUED DATE :2005/02/18 REVISED DATE : Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min. -60 -1.0 Typ. -0.04 7 18 5 7 12 5 68 32 1745 165 125 Max. -3.0 100 -1 -25 90 120 28 2790 p F ns n C Unit V V/ V S n A u A u A m Test Conditions VGS=0, ID=-250u A Reference to 25 , ID=-1m A VDS=VGS, ID=-250u A VDS=-10V, ID=-4A VGS= 25V Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) VGS(th) gfs IGSS IDSS VDS=-60V, VGS=0 VDS=-48V, VGS=0 VGS=-10V, ID=-4A VGS=-4.5V, ID=-3A ID=-4A VDS=-48V VGS=-4.5V VDS=-30V ID=-1A VGS=-10V RG=3.3 RD=30 VGS=0V VDS=-25V f=1.0MHz Static Drain-Source On-Resistance2 Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Source-Drain Diode Parameter Forward On Voltage 2...