GL9435
GL9435 is P-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by GTM.
Description
Features
Package Dimensions SOT-223
REF. A C D E I H
Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 10 0 0.60 0.80 0.25 0.35
REF. B J 1 2 3 4 5
Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg
Ratings -30 25 -6.0 -4.8 -20 2.7 0.02 -55 ~ +150
Unit V V A A A W W/
Total Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Parameter Thermal Resistance Junction-ambient
Symbol Max. Rthj-amb
Value 45
Unit /W
Page: 1/4
ISSUED DATE :2005/02/18 REVISED DATE :
Electrical Characteristics(Tj = 25
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Unless otherwise specified)
Min. -30 -1.0 Typ. -0.02 10 9.2 2.8 5.2 11 8 25 17 507 222 158 Max. -3.0 100 -1 -25 50 100 16 912 p F ns n C Unit V V/ V S n A u A u A m Test Conditions VGS=0, ID=-250u A Reference to 25 , ID=-1m A VDS=VGS, ID=-250u A VDS=-10V, ID=-5.3A VGS= 25V
Symbol BVDSS
BVDSS / Tj
Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 )
VGS(th) gfs IGSS IDSS
VDS=-30V, VGS=0 VDS=-24V, VGS=0 VGS=-10V, ID=-5.3A VGS=-4.5V, ID=-4.2A ID=-5.3A VDS=-24V VGS=-4.5V VDS=-15V ID=-1A VGS=-10V RG=6 RD=15 VGS=0V VDS=-15V f=1.0MHz
Static Drain-Source On-Resistance2 Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss
Source-Drain Diode
Parameter Forward On Voltage
Symbol VSD Trr...