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GS66516B - Bottom-side cooled 650V E-mode GaN transistor

Description

The GS66516B is an enhancement mode GaN on silicon power transistor.

The properties of GaN allow for high current, high voltage breakdown and high switching frequency.

GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging.

Features

  • 650 V enhancement mode power transistor.
  • Bottom-side cooled configuration.
  • RDS(on) = 25 mΩ.
  • IDS(max) = 60 A.
  • Ultra-low FOM die.
  • Low inductance GaNPX® package.
  • Simple drive requirements (0 V to 6 V).
  • Transient tolerant gate drive (-20 V / +10 V).
  • Very high switching frequency (> 10 MHz).
  • Fast and controllable fall and rise times.
  • Reverse current capability.
  • Zero reverse recovery loss.

📥 Download Datasheet

Datasheet preview – GS66516B

Datasheet Details

Part number GS66516B
Manufacturer GaN Systems
File Size 1.03 MB
Description Bottom-side cooled 650V E-mode GaN transistor
Datasheet download datasheet GS66516B Datasheet
Additional preview pages of the GS66516B datasheet.

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Full PDF Text Transcription

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GS66516B Bottom-side cooled 650 V E-mode GaN transistor Datasheet Features • 650 V enhancement mode power transistor • Bottom-side cooled configuration • RDS(on) = 25 mΩ • IDS(max) = 60 A • Ultra-low FOM die • Low inductance GaNPX® package • Simple drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +10 V) • Very high switching frequency (> 10 MHz) • Fast and controllable fall and rise times • Reverse current capability • Zero reverse recovery loss • Small 11 x 9 mm2 PCB footprint • Source Sense (SS) pins for optimized gate drive • Dual Gate Pins for optimal paralleling • RoHS 3 (6 + 4) compliant Package Outline Circuit Symbol Applications • AC-DC Converters • DC-DC Converters • Bridgeless Totem Pole PFC • Inverters • Energy Storage Systems • On Board Battery Charg
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