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GS66516B Datasheet Bottom-side cooled 650V E-mode GaN transistor

Manufacturer: GaN Systems

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Datasheet Details

Part number GS66516B
Manufacturer GaN Systems
File Size 1.03 MB
Description Bottom-side cooled 650V E-mode GaN transistor
Download Download datasheet GS66516B Download (PDF)

General Description

The GS66516B is an enhancement mode GaN on silicon power transistor.

The properties of GaN allow for high current, high voltage breakdown and high switching frequency.

GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging.

Overview

GS66516B Bottom-side cooled 650 V E-mode GaN transistor Datasheet.

Key Features

  • 650 V enhancement mode power transistor.
  • Bottom-side cooled configuration.
  • RDS(on) = 25 mΩ.
  • IDS(max) = 60 A.
  • Ultra-low FOM die.
  • Low inductance GaNPX® package.
  • Simple drive requirements (0 V to 6 V).
  • Transient tolerant gate drive (-20 V / +10 V).
  • Very high switching frequency (> 10 MHz).
  • Fast and controllable fall and rise times.
  • Reverse current capability.
  • Zero reverse recovery loss.

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