GS66516B Overview
The GS66516B is an enhancement mode GaN on silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging.
GS66516B Key Features
- 650 V enhancement mode power transistor
- Bottom-side cooled configuration
- RDS(on) = 25 mΩ
- IDS(max) = 60 A
- Ultra-low FOM die
- Low inductance GaNPX® package
- Simple drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 V / +10 V)
- Very high switching frequency (> 10 MHz)
- Fast and controllable fall and rise times