GS66516B
GS66516B is Bottom-side cooled 650V E-mode GaN transistor manufactured by GaN Systems.
GS66516B Bottom-side cooled 650 V E-mode GaN transistor
Features
- 650 V enhancement mode power transistor
- Bottom-side cooled configuration
- RDS(on) = 25 mΩ
- IDS(max) = 60 A
- Ultra-low FOM die
- Low inductance GaNPX® package
- Simple drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 V / +10 V)
- Very high switching frequency (> 10 MHz)
- Fast and controllable fall and rise times
- Reverse current capability
- Zero reverse recovery loss
- Small 11 x 9 mm2 PCB footprint
- Source Sense (SS) pins for optimized gate drive
- Dual Gate Pins for optimal paralleling
- RoHS 3 (6 + 4) pliant
Package Outline
Circuit Symbol
Applications
- AC-DC Converters
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