G3R160MT12D
G3R160MT12D is Silicon Carbide MOSFET manufactured by GeneSiC.
G3R160MT12D 1200 V 160 mΩ Si C MOSFET
Silicon Carbide MOSFET
N-Channel Enhancement Mode
Features
- G3R™ (3rd Generation) Technology
- Low Temperature Coefficient of RDS(ON)
- Lower QG and Smaller RG(INT)
- Low Device Capacitances (COSS, CRSS)
- Lo Ring™
- Electromagnetically Optimized Design
- Superior Cost-Performance Index
- Robust Body Diode with Low VF and Low QRR
- 100% Avalanche (UIL) Tested
Advantages
- patible with mercial Gate Drivers
- Low Conduction Losses at all Temperatures
- Faster and More Efficient Switching
- Lesser Switching Spikes and Lower Losses
- Reduced Ringing
- Better Power Density and System Efficiency
- Ease of Paralleling without Thermal Runaway
- Superior Robustness and System Reliability
Package TO-247-3
=
RDS(ON)(Typ.) =
ID (TC = 100°C) =
1200 V 160 mΩ 13 A
D = Drain G = Gate S = Source
Ro HS REACH
Applications...
