G3R160MT17D
G3R160MT17D is Silicon Carbide MOSFET manufactured by GeneSiC.
G3R160MT17D 1700 V 160 mΩ Si C MOSFET
Silicon Carbide MOSFET
N-Channel Enhancement Mode
Features
- G3R™ Technology with +15 V Gate Drive
- Softer RDS(ON) v/s Temperature Dependency
- Lo Ring™
- Electromagnetically Optimized Design
- Smaller RG(INT) and Lower QG
- Low Device Capacitances (COSS, CRSS)
- Superior Cost-Performance Index
- Robust Body Diode with Low VF and Low QRR
- Industry-Leading UIL & Short-Circuit Robustness
Advantages
- patible with mercial Gate Drivers
- Low Conduction Losses at all Temperatures
- Reduced Ringing
- Faster and More Efficient Switching
- Lesser Switching Spikes and Lower Losses
- Better Power Density and System Efficiency
- Ease of Paralleling without Thermal Runaway
- Higher System Reliability
Package TO-247-3
=
RDS(ON)(Typ.) =
ID(TC = 100°C) =
1700 V 160 mΩ 12 A
D = Drain G = Gate S = Source
Ro HS REACH
Applications...
