G3R160MT17D - Silicon Carbide MOSFET

GeneSiC

Key Features

G3R™ Technology with +15 V Gate Drive.
Softer RDS(ON) v/s Temperature Dependency.
LoRing™ - Electromagnetically Optimized Design.
Smaller RG(INT) and Lower QG.
Low Device Capacitances (COSS, CRSS).
Superior Cost-Performance Index.
Robust Body Diode with Low VF and Low QRR.
Industry-Leading UIL & Short-Circuit Robustness Advantages.
Compatible with Commercial Gate Drivers.
Low Conduction Losses at all Tempe.

G3R160MT17D silicon carbide mosfet by GeneSiC - Datasheet Preview

Datasheet Details

Part number	G3R160MT17D
Manufacturer	GeneSiC
File Size	1.11 MB
Description	Silicon Carbide MOSFET
Datasheet	G3R160MT17D Datasheet

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Full PDF Text Transcription (Reference)

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G3R160MT17D 1700 V 160 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ Technology with +15 V Gate Drive • Softer RDS(ON) v/s Temperature Dependency • LoRing™ - Electromagnetically Optimized Design • Smaller RG(INT) and Lower QG • Low Device Capacitances (COSS, CRSS) • Superior Cost-Performance Index • Robust Body Diode with Low VF and Low QRR • Industry-Leading UIL & Short-Circuit Robustness Advantages • Compatible with Commercial Gate Drivers • Low Conduction Losses at all Temperatures • Reduced Ringing • Faster and More Efficient Switching • Lesser Switching Spikes and Lower Losses • Better Power Density and System Efficiency • Ease of Paralleling without Thermal Runaway • Higher System Reliability TM Package TO-247-3 VDS = RDS(ON)(Typ.