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G3R160MT17D 1700 V 160 mΩ SiC MOSFET
Silicon Carbide MOSFET
N-Channel Enhancement Mode
Features
• G3R™ Technology with +15 V Gate Drive • Softer RDS(ON) v/s Temperature Dependency • LoRing™ - Electromagnetically Optimized Design • Smaller RG(INT) and Lower QG • Low Device Capacitances (COSS, CRSS) • Superior Cost-Performance Index • Robust Body Diode with Low VF and Low QRR • Industry-Leading UIL & Short-Circuit Robustness
Advantages
• Compatible with Commercial Gate Drivers • Low Conduction Losses at all Temperatures • Reduced Ringing • Faster and More Efficient Switching • Lesser Switching Spikes and Lower Losses • Better Power Density and System Efficiency • Ease of Paralleling without Thermal Runaway • Higher System Reliability
TM
Package TO-247-3
VDS
=
RDS(ON)(Typ.
G3R160MT17D Datasheet
