G3R160MT17J
G3R160MT17J is Silicon Carbide MOSFET manufactured by GeneSiC.
G3R160MT17J 1700 V 160 mΩ Si C MOSFET
Silicon Carbide MOSFET
N-Channel Enhancement Mode
Features
- G3R™ Technology with +15 V Gate Drive
- Softer RDS(ON) v/s Temperature Dependency
- Lo Ring™
- Electromagnetically Optimized Design
- Smaller RG(INT) and Lower QG
- Low Device Capacitances (COSS, CRSS)
- Superior Cost-Performance Index
- Robust Body Diode with Low VF and Low QRR
- Optimized Package with Separate Driver Source Pin
Advantages
- patible with mercial Gate Drivers
- Low Conduction Losses at all Temperatures
- Reduced Ringing
- Faster and More Efficient Switching
- Lesser Switching Spikes and Lower Losses
- Better Power Density and System Efficiency
- Ease of Paralleling without Thermal Runaway
- Superior Robustness and System Reliability
=
RDS(ON)(Typ.) =
ID(TC = 100°C) =
1700 V 160 mΩ 13 A
Package
TO-263-7
D = Drain
G =...
