G3R160MT12J - Silicon Carbide MOSFET

GeneSiC

Key Features

G3R™ (3rd Generation) Technology.
Low Temperature Coefficient of RDS(ON).
Lower QG and Smaller RG(INT).
Low Device Capacitances (COSS, CRSS).
LoRing™ - Electromagnetically Optimized Design.
Superior Cost-Performance Index.
Robust Body Diode with Low VF and Low QRR.
100% Avalanche (UIL) Tested Advantages.
Compatible with Commercial Gate Drivers.
Low Conduction Losses at all Temperatures.
Faster and.

G3R160MT12J silicon carbide mosfet by GeneSiC - Datasheet Preview

Datasheet Details

Part number	G3R160MT12J
Manufacturer	GeneSiC
File Size	3.09 MB
Description	Silicon Carbide MOSFET
Datasheet	G3R160MT12J Datasheet

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Full PDF Text Transcription (Reference)

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G3R160MT12J 1200 V 160 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ (3rd Generation) Technology • Low Temperature Coefficient of RDS(ON) • Lower QG and Smaller RG(INT) • Low Device Capacitances (COSS, CRSS) • LoRing™ - Electromagnetically Optimized Design • Superior Cost-Performance Index • Robust Body Diode with Low VF and Low QRR • 100% Avalanche (UIL) Tested Advantages • Compatible with Commercial Gate Drivers • Low Conduction Losses at all Temperatures • Faster and More Efficient Switching • Lesser Switching Spikes and Lower Losses • Reduced Ringing • Better Power Density and System Efficiency • Ease of Paralleling without Thermal Runaway • Superior Robustness and System Reliability TM VDS = RDS(ON)(Typ.