G3R160MT12J Datasheet PDF (Silicon Carbide MOSFET)

G3R160MT12J - Silicon Carbide MOSFET

Features

G3R™ (3rd Generation) Technology.
Low Temperature Coefficient of RDS(ON).
Lower QG and Smaller RG(INT).
Low Device Capacitances (COSS, CRSS).
LoRing™ - Electromagnetically Optimized Design.
Superior Cost-Performance Index.
Robust Body Diode with Low VF and Low QRR.
100% Avalanche (UIL) Tested Advantages.
Compatible with Commercial Gate Drivers.
Low Conduction Losses at all Temperatures.
Faster and.

Datasheet Details

Part number	G3R160MT12J
Manufacturer	GeneSiC
File Size	3.09 MB
Description	Silicon Carbide MOSFET
Datasheet	G3R160MT12J Datasheet
Additional preview pages of the G3R160MT12J datasheet.

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Full PDF Text Transcription

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G3R160MT12J 1200 V 160 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ (3rd Generation) Technology • Low Temperature Coefficient of RDS(ON) • Lower QG and Smaller RG(INT) • Low Device Capacitances (COSS, CRSS) • LoRing™ - Electromagnetically Optimized Design • Superior Cost-Performance Index • Robust Body Diode with Low VF and Low QRR • 100% Avalanche (UIL) Tested Advantages • Compatible with Commercial Gate Drivers • Low Conduction Losses at all Temperatures • Faster and More Efficient Switching • Lesser Switching Spikes and Lower Losses • Reduced Ringing • Better Power Density and System Efficiency • Ease of Paralleling without Thermal Runaway • Superior Robustness and System Reliability TM VDS = RDS(ON)(Typ.

Published: Dec 8, 2024 |