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GAP05SLT80-CAL - Silicon Carbide Power Schottky Diode

Features

  • 8000 V Silicon Carbide Schottky rectifier.
  • 175 °C maximum operating temperature.
  • Positive temperature coefficient of VF.
  • Extremely fast switching speeds.
  • Superior figure of merit QC/IF Advantages.
  • Improved circuit efficiency (Lower overall cost).
  • Low switching losses.
  • Ease of paralleling devices without thermal runaway.
  • Smaller heat sink requirements.
  • Low reverse recovery current.
  • Low device capacitance.
  • Low reverse leakage current at.

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Datasheet preview – GAP05SLT80-CAL

Datasheet Details

Part number GAP05SLT80-CAL
Manufacturer GeneSiC
File Size 333.63 KB
Description Silicon Carbide Power Schottky Diode
Datasheet download datasheet GAP05SLT80-CAL Datasheet
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Full PDF Text Transcription

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Silicon Carbide Power Schottky Diode Features  8000 V Silicon Carbide Schottky rectifier  175 °C maximum operating temperature  Positive temperature coefficient of VF  Extremely fast switching speeds  Superior figure of merit QC/IF Advantages  Improved circuit efficiency (Lower overall cost)  Low switching losses  Ease of paralleling devices without thermal runaway  Smaller heat sink requirements  Low reverse recovery current  Low device capacitance  Low reverse leakage current at operating temperature Die Datasheet GAP05SLT80-CAL VRRM IF QC = 8000 V = 50 mA = 8 nC Die Size = 2.4 mm x 2.
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