GAP05SLT80-CAL Description
Silicon Carbide Power Schottky Diode.
GAP05SLT80-CAL Key Features
- 8000 V Silicon Carbide Schottky rectifier
- 175 °C maximum operating temperature
- Positive temperature coefficient of VF
- Extremely fast switching speeds
- Superior figure of merit QC/IF
- Improved circuit efficiency (Lower overall cost)
- Low switching losses
- Ease of paralleling devices without thermal runaway
- Smaller heat sink requirements
- Low reverse recovery current