GAP05SLT80-CAL Datasheet | GeneSiC

Silicon Carbide Power Schottky Diode Features - 8000 V Silicon Carbide Schottky rectifier - 175 °C maximum operating temperature - Positive temperature coefficient of VF - Extremely fast switching speeds - Superior figure of merit QC/IF Advantages - Improved circuit efficiency (Lower overall cost) - Low switching losses - Ease of paralleling devices without thermal runaway - Smaller heat sink requirements - Low reverse recovery current - Low device capacitance - Low reverse leakage current at operating temperature Die Datasheet VRRM IF QC = 8000 V = 50 mA = 8 nC Die Size = 2.4 mm x 2.4 mm Applications - Down Hole Oil Drilling, Geothermal Instrumentation - High Voltage...