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GAP05SLT80-CAL Datasheet Silicon Carbide Power Schottky Diode

Manufacturer: GeneSiC

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Datasheet Details

Part number GAP05SLT80-CAL
Manufacturer GeneSiC
File Size 333.63 KB
Description Silicon Carbide Power Schottky Diode
Download GAP05SLT80-CAL Download (PDF)

Overview

Silicon Carbide Power Schottky Diode.

Key Features

  • 8000 V Silicon Carbide Schottky rectifier.
  • 175 °C maximum operating temperature.
  • Positive temperature coefficient of VF.
  • Extremely fast switching speeds.
  • Superior figure of merit QC/IF Advantages.
  • Improved circuit efficiency (Lower overall cost).
  • Low switching losses.
  • Ease of paralleling devices without thermal runaway.
  • Smaller heat sink requirements.
  • Low reverse recovery current.
  • Low device capacitance.
  • Low reverse leakage current at.

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