GAP3SHT33-CAL Datasheet | GeneSiC

Silicon Carbide Power Schottky Diode Features - 3300 V Schottky rectifier - 210 °C maximum operating temperature - Positive temperature coefficient of VF - Fast switching speeds - Superior figure of merit QC/IF Die Datasheet VRRM IF @ 25 oC = 3300 V = 0.3 A = 20 nC Advantages - Improved circuit efficiency (Lower overall cost) - Significantly reduced switching losses pare to Si PiN diodes - Ease of paralleling devices without thermal runaway - Smaller heat sink requirements - Low reverse recovery current - Low device capacitance Die Size = 1.39 mm x 1.39 mm Applications - Down Hole Oil Drilling, Geothermal Instrumentation - High Voltage Multipliers - Military Power...