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GAP3SHT33-CAL - Silicon Carbide Power Schottky Diode

Product Overview

GeneSiC

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GAP3SHT33-CAL Silicon Carbide Power Schottky Diode by GeneSiC - Datasheet Preview — Datasheet preview – GAP3SHT33-CAL

Datasheet Details

Part number	GAP3SHT33-CAL
Manufacturer	GeneSiC
File Size	214.79 KB
Description	Silicon Carbide Power Schottky Diode
Datasheet	GAP3SHT33-CAL Datasheet
Additional preview pages of the GAP3SHT33-CAL datasheet.

Product details

Features

3300 V Schottky rectifier.
210 °C maximum operating temperature.
Positive temperature coefficient of VF.
Fast switching speeds.
Superior figure of merit QC/IF Die Datasheet GAP3SHT33-CAL VRRM IF @ 25 oC QC = 3300 V = 0.3 A = 20 nC Advantages.
Improved circuit efficiency (Lower overall cost).
Significantly reduced switching losses compare to Si PiN diodes.
Ease of paralleling devices without thermal runaway.
Sm.

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Published: Jun 25, 2016 |