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GAP3SHT33-CAU - Silicon Carbide Power Schottky Diode

Features

  • 3300 V Schottky rectifier.
  • 210 °C maximum operating temperature.
  • Positive temperature coefficient of VF.
  • Fast switching speeds.
  • Superior figure of merit QC/IF Die Datasheet GAP3SHT33-CAU VRRM IF @ 25 oC QC = 3300 V = 0.3 A = 20 nC Advantages.
  • Improved circuit efficiency (Lower overall cost).
  • Significantly reduced switching losses compare to Si PiN diodes.
  • Ease of paralleling devices without thermal runaway.
  • Sm.

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Datasheet preview – GAP3SHT33-CAU

Datasheet Details

Part number GAP3SHT33-CAU
Manufacturer GeneSiC
File Size 215.36 KB
Description Silicon Carbide Power Schottky Diode
Datasheet download datasheet GAP3SHT33-CAU Datasheet
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Full PDF Text Transcription

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Silicon Carbide Power Schottky Diode Features • 3300 V Schottky rectifier • 210 °C maximum operating temperature • Positive temperature coefficient of VF • Fast switching speeds • Superior figure of merit QC/IF Die Datasheet GAP3SHT33-CAU VRRM IF @ 25 oC QC = 3300 V = 0.3 A = 20 nC Advantages • Improved circuit efficiency (Lower overall cost) • Significantly reduced switching losses compare to Si PiN diodes • Ease of paralleling devices without thermal runaway • Smaller heat sink requirements • Low reverse recovery current • Low device capacitance Die Size = 1.39 mm x 1.
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