GAP3SHT33-CAU Description
Silicon Carbide Power Schottky Diode.
GAP3SHT33-CAU Key Features
- 3300 V Schottky rectifier
- 210 °C maximum operating temperature
- Positive temperature coefficient of VF
- Fast switching speeds
- Superior figure of merit QC/IF
- Improved circuit efficiency (Lower overall cost)
- Significantly reduced switching losses pare to Si PiN
- Ease of paralleling devices without thermal runaway
- Smaller heat sink requirements
- Low reverse recovery current