GAP3SLT33-220FP - Silicon Carbide Schottky Diode

Features

Enhanced Surge and Avalanche Robustness.
Superior Figure of Merit QC/IF.
Low VF for High Temperature Operation.
Low Thermal Resistance.
Low Reverse Leakage Current.
Temperature Independent Fast Switching.
Positive Temperature Coefficient of VF.
High dV/dt Ruggedness Package TO-220-FP TM VRRM = IF (TL ≤ 125°C) = QC = 3300 V 0.3 A 14 nC Case RoHS K A REACH Advantages.
High System Reliability.
O.

GeneSiC

Datasheet Details

Part number	GAP3SLT33-220FP
Manufacturer	GeneSiC
File Size	436.15 KB
Description	Silicon Carbide Schottky Diode
Datasheet	GAP3SLT33-220FP Datasheet
Additional preview pages of the GAP3SLT33-220FP datasheet.

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Full PDF Text Transcription

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GAP3SLT33-220FP 3300V 0.3A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Enhanced Surge and Avalanche Robustness • Superior Figure of Merit QC/IF • Low VF for High Temperature Operation • Low Thermal Resistance • Low Reverse Leakage Current • Temperature Independent Fast Switching • Positive Temperature Coefficient of VF • High dV/dt Ruggedness Package TO-220-FP TM VRRM = IF (TL ≤ 125°C) = QC = 3300 V 0.

Published: May 5, 2019 |