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GB01SLT12-214 - Silicon Carbide Schottky Diode

Features

  • Low VF for High Temperature Operation.
  • Enhanced Surge and Avalanche Robustness.
  • Superior Figure of Merit QC/IF.
  • Low Thermal Resistance.
  • Low Reverse Leakage Current.
  • Temperature Independent Fast Switching.
  • Positive Temperature Coefficient of VF.
  • High dV/dt Ruggedness Advantages.
  • Improved System Efficiency.
  • High System Reliability.
  • Optimal Price Performance.
  • Reduced Cooling Requirements.

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Datasheet preview – GB01SLT12-214

Datasheet Details

Part number GB01SLT12-214
Manufacturer GeneSiC
File Size 403.92 KB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet GB01SLT12-214 Datasheet
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Full PDF Text Transcription

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GB01SLT12-214 1200V 1A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Low VF for High Temperature Operation • Enhanced Surge and Avalanche Robustness • Superior Figure of Merit QC/IF • Low Thermal Resistance • Low Reverse Leakage Current • Temperature Independent Fast Switching • Positive Temperature Coefficient of VF • High dV/dt Ruggedness Advantages • Improved System Efficiency • High System Reliability • Optimal Price Performance • Reduced Cooling Requirements • Increased System Power Density • Zero Reverse Recovery Current • Easy to Parallel without Thermal Runaway • Enables Extremely Fast Switching TM Package VRRM = IF (TL ≤ 150°C) = QC = 1200 V 1A 5 nC K RoHS DO-214 A REACH Applications • High Voltage Sensing • Solar Inverters • Electric Vehicles • Hi
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