Datasheet4U Logo Datasheet4U.com

GB01SLT12-214 - Silicon Carbide Schottky Diode

Key Features

  • Low VF for High Temperature Operation.
  • Enhanced Surge and Avalanche Robustness.
  • Superior Figure of Merit QC/IF.
  • Low Thermal Resistance.
  • Low Reverse Leakage Current.
  • Temperature Independent Fast Switching.
  • Positive Temperature Coefficient of VF.
  • High dV/dt Ruggedness Advantages.
  • Improved System Efficiency.
  • High System Reliability.
  • Optimal Price Performance.
  • Reduced Cooling Requirements.

📥 Download Datasheet

Datasheet Details

Part number GB01SLT12-214
Manufacturer GeneSiC
File Size 403.92 KB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet GB01SLT12-214 Datasheet

Other Datasheets by GeneSiC

Part Number Description
GB01SLT12-220 Silicon Carbide Schottky Diode
GB01SLT12-252 Silicon Carbide Schottky Diode
GB01SLT06-214 Silicon Carbide Schottky Diode
GB01SHT06-CAL High Temperature Silicon Carbide Power Schottky Diode
GB01SHT06-CAU High Temperature Silicon Carbide Power Schottky Diode
GB01SHT12-CAL High Temperature Silicon Carbide Power Schottky Diode
GB02SHT01-46 High Temperature Silicon Carbide Power Schottky Diode
GB02SLT12-214 Silicon Carbide Schottky Diode
GB02SLT12-252 Silicon Carbide Schottky Diode
GB05MPS17-247 Silicon Carbide Schottky Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GB01SLT12-214 1200V 1A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Low VF for High Temperature Operation • Enhanced Surge and Avalanche Robustness • Superior Figure of Merit QC/IF • Low Thermal Resistance • Low Reverse Leakage Current • Temperature Independent Fast Switching • Positive Temperature Coefficient of VF • High dV/dt Ruggedness Advantages • Improved System Efficiency • High System Reliability • Optimal Price Performance • Reduced Cooling Requirements • Increased System Power Density • Zero Reverse Recovery Current • Easy to Parallel without Thermal Runaway • Enables Extremely Fast Switching TM Package VRRM = IF (TL ≤ 150°C) = QC = 1200 V 1A 5 nC K RoHS DO-214 A REACH Applications • High Voltage Sensing • Solar Inverters • Electric Vehicles • Hi