Datasheet Summary
GB01SLT12-214 1200V 1A SiC Schottky MPS™ Diode
Silicon Carbide Schottky Diode
Features
- Low VF for High Temperature Operation
- Enhanced Surge and Avalanche Robustness
- Superior Figure of Merit QC/IF
- Low Thermal Resistance
- Low Reverse Leakage Current
- Temperature Independent Fast Switching
- Positive Temperature Coefficient of VF
- High dV/dt Ruggedness
Advantages
- Improved System Efficiency
- High System Reliability
- Optimal Price Performance
- Reduced Cooling Requirements
- Increased System Power Density
- Zero Reverse Recovery Current
- Easy to Parallel without Thermal Runaway
- Enables Extremely Fast Switching
Package
VRRM
=
IF (TL ≤ 150°C) =
=
1200 V 1A 5...