Datasheet Summary
High Temperature Silicon Carbide Power Schottky Diode
Features
- 650 V Schottky rectifier
- 210 °C maximum operating temperature
- Zero reverse recovery charge
- Superior surge current capability
- Positive temperature coefficient of VF
- Temperature independent switching behavior
- Lowest figure of merit QC/IF
- Available screened to Mil-PRF-19500
Die Datasheet
GB01SHT06-CAL
VRRM IF @ 25 oC
= 650 V = 2.5 A = 7 nC
Die Size = 0.9 mm x 0.9 mm
Advantages
- High temperature operation
- Improved circuit efficiency (Lower overall cost)
- Low switching losses
- Ease of paralleling devices without thermal runaway
- Smaller heat sink requirements
- Industry’s lowest reverse recovery...