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GB01SLT12-220 - Silicon Carbide Schottky Diode

Features

  • 1200 V Schottky rectifier.
  • 175 °C maximum operating temperature.
  • Zero reverse recovery charge.
  • Positive temperature coefficient of VF.
  • Extremely fast switching speeds.
  • Temperature independent switching behavior.
  • Lowest figure of merit QC/IF Package.
  • RoHS Compliant VRRM I F QC Case PIN 1 1 2 PIN 2 TO.
  • 220AC = 1200 V = 1A = 4 nC CASE Advantages.
  • Improved circuit efficiency (Lower overall cost).

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Datasheet preview – GB01SLT12-220

Datasheet Details

Part number GB01SLT12-220
Manufacturer GeneSiC
File Size 380.39 KB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet GB01SLT12-220 Datasheet
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Full PDF Text Transcription

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GB01SLT12-220 Silicon Carbide Power Schottky Diode Features •1200 V Schottky rectifier •175 °C maximum operating temperature •Zero reverse recovery charge •Positive temperature coefficient of VF • Extremely fast switching speeds • Temperature independent switching behavior • Lowest figure of merit QC/IF Package •RoHS Compliant VRRM I F QC Case PIN 1 1 2 PIN 2 TO – 220AC = 1200 V = 1A = 4 nC CASE Advantages •Improved circuit efficiency (Lower overall cost) •Low switching losses •Ease of paralleling devices without thermal runaway •Smaller heat sink requirements •Industry's lowest reverse recovery charge •Industry's lowest device capacitance •Ideal for output switching of power supplies •Best in class reverse leakage current at operating temperature Applications •Powe
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