• Part: GB01SLT12-220
  • Description: Silicon Carbide Schottky Diode
  • Manufacturer: GeneSiC
  • Size: 380.39 KB
Download GB01SLT12-220 Datasheet PDF
GB01SLT12-220 page 2
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GB01SLT12-220 page 3
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Datasheet Summary

Silicon Carbide Power Schottky Diode Features - 1200 V Schottky rectifier - 175 °C maximum operating temperature - Zero reverse recovery charge - Positive temperature coefficient of VF - Extremely fast switching speeds - Temperature independent switching behavior - Lowest figure of merit QC/IF Package - RoHS pliant VRRM I Case PIN 1 1 2 PIN 2 - 220AC = 1200 V = 1A = 4 nC CASE Advantages - Improved circuit efficiency (Lower overall cost) - Low switching losses - Ease of paralleling devices without thermal runaway - Smaller heat sink requirements - Industry's lowest reverse recovery charge - Industry's lowest device capacitance - Ideal for output switching...