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GB01SHT06-CAU - High Temperature Silicon Carbide Power Schottky Diode

Features

  • 650 V Schottky rectifier.
  • 210 °C maximum operating temperature.
  • Zero reverse recovery charge.
  • Superior surge current capability.
  • Positive temperature coefficient of VF.
  • Temperature independent switching behavior.
  • Lowest figure of merit QC/IF.
  • Available screened to Mil-PRF-19500 Die Datasheet GB01SHT06-CAU   VRRM IF @ 25 oC QC = 650 V = 2.5 A = 7 nC   Die Size = 0.9 mm x 0.9 mm Advantages.
  • High temperature operation.
  • Improved circuit effic.

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Datasheet preview – GB01SHT06-CAU

Datasheet Details

Part number GB01SHT06-CAU
Manufacturer GeneSiC
File Size 288.50 KB
Description High Temperature Silicon Carbide Power Schottky Diode
Datasheet download datasheet GB01SHT06-CAU Datasheet
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Full PDF Text Transcription

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  High Temperature Silicon Carbide Power Schottky Diode Features  650 V Schottky rectifier  210 °C maximum operating temperature  Zero reverse recovery charge  Superior surge current capability  Positive temperature coefficient of VF  Temperature independent switching behavior  Lowest figure of merit QC/IF  Available screened to Mil-PRF-19500 Die Datasheet GB01SHT06-CAU   VRRM IF @ 25 oC QC = 650 V = 2.5 A = 7 nC   Die Size = 0.9 mm x 0.
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