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GB02SHT01-46 - High Temperature Silicon Carbide Power Schottky Diode

Product Overview

GeneSiC

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GB02SHT01-46 High Temperature Silicon Carbide Power Schottky Diode by GeneSiC - Datasheet Preview — Datasheet preview – GB02SHT01-46

Datasheet Details

Part number	GB02SHT01-46
Manufacturer	GeneSiC
File Size	371.92 KB
Description	High Temperature Silicon Carbide Power Schottky Diode
Datasheet	GB02SHT01-46 Datasheet
Additional preview pages of the GB02SHT01-46 datasheet.

Product details

Features

100 V Schottky rectifier.
210 °C maximum operating temperature.
Zero reverse recovery charge.
Superior surge current capability.
Positive temperature coefficient of VF.
Temperature independent switching behavior.
Lowest figure of merit QC/IF.
Available screened to Mil-PRF-19500 Package.
RoHS Compliant GB02SHT01-46 VRRM IF (Tc=25°C) QC = 100 V = 4A = 9 nC 2 1 TO.
46 Advantages.
High temperature operation.
Improved circuit ef.

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Published: May 6, 2019 |