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GD2X30MPS06N - Silicon Carbide Schottky Diode

Datasheet Summary

Features

  • Gen4 Thin Chip Technology for Low VF.
  • Superior Figure of Merit QC/IF.
  • 100% Avalanche Tested.
  • Enhanced Surge Current Robustness.
  • Temperature Independent Fast Switching.
  • Low Thermal Resistance.
  • Positive Temperature Coefficient of VF.
  • High dV/dt Ruggedness Advantages.
  • Optimal Price Performance.
  • Improved System Efficiency.
  • Reduced Cooling Requirements.
  • Increased System Power Density.

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Datasheet Details

Part number GD2X30MPS06N
Manufacturer GeneSiC
File Size 554.21 KB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet GD2X30MPS06N Datasheet
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GD2X30MPS06N 650V 60A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Gen4 Thin Chip Technology for Low VF • Superior Figure of Merit QC/IF • 100% Avalanche Tested • Enhanced Surge Current Robustness • Temperature Independent Fast Switching • Low Thermal Resistance • Positive Temperature Coefficient of VF • High dV/dt Ruggedness Advantages • Optimal Price Performance • Improved System Efficiency • Reduced Cooling Requirements • Increased System Power Density • Zero Reverse Recovery Current • High System Reliability • Easy to Parallel without Thermal Runaway • Enables Extremely Fast Switching TM Package VRRM = IF (TC = 107°C) = QC = 650 V 60 A * 92 nC * A A RoHS SOT-227 K K REACH Applications • Power Factor Correction (PFC) • Electric Vehicles and Battery C
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