GD2X30MPS12N - Silicon Carbide Schottky Diode

Product Overview

GeneSiC

Part number	GD2X30MPS12N
Manufacturer	GeneSiC
File Size	568.47 KB
Description	Silicon Carbide Schottky Diode
Datasheet	GD2X30MPS12N Datasheet
Additional preview pages of the GD2X30MPS12N datasheet.

Gen4 Thin Chip Technology for Low VF.
Superior Figure of Merit QC/IF.
100% Avalanche Tested.
Enhanced Surge Current Robustness.
Temperature Independent Fast Switching.
Low Thermal Resistance.
Positive Temperature Coefficient of VF.
High dV/dt Ruggedness Package SOT-227 TM VRRM = IF (TC = 130°C) = QC = 1200 V 60 A.
194 nC.
A A RoHS K K REACH Advantages.
Improved System Efficiency.
H.

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Published: Dec 20, 2024 |