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GD2X30MPS12D - Silicon Carbide Schottky Diode

Datasheet Summary

Features

  • Gen4 Thin Chip Technology for Low VF.
  • Superior Figure of Merit QC.
  • VF.
  • 100% Avalanche (UIL) Tested.
  • Enhanced Surge Current Withstand Capability.
  • Temperature Independent Fast Switching.
  • Low Thermal Resistance.
  • Positive Temperature Coefficient of VF.
  • High dV/dt Ruggedness Package TO-247-3 TM VRRM = IF (TC = 148°C) = QC = 1200 V 60 A.
  • 194 nC.
  • Case RoHS AKA REACH Advantages.
  • Improved System Ef.

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Datasheet Details

Part number GD2X30MPS12D
Manufacturer GeneSiC
File Size 561.96 KB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet GD2X30MPS12D Datasheet
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GD2X30MPS12D 1200V 60A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Gen4 Thin Chip Technology for Low VF • Superior Figure of Merit QC*VF • 100% Avalanche (UIL) Tested • Enhanced Surge Current Withstand Capability • Temperature Independent Fast Switching • Low Thermal Resistance • Positive Temperature Coefficient of VF • High dV/dt Ruggedness Package TO-247-3 TM VRRM = IF (TC = 148°C) = QC = 1200 V 60 A * 194 nC * Case RoHS AKA REACH Advantages • Improved System Efficiency • High System Reliability • Optimal Price Performance • Reduced Cooling Requirements • Increased System Power Density • Zero Reverse Recovery Current • Easy to Parallel without Thermal Runaway • Enables Extremely Fast Switching Applications • Power Factor Correction (PFC) • Electric Ve
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