Globaltech GSM10N10DF
The GSM10N10DF is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The GSM10N10DF meet the RoHS and Green Product requirement with full function reliability approved.| Part No. | GSM10N10DF |
|---|---|
| Datasheet | GSM10N10DF Download |
| Manufacturer |  Globaltech |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Packages & Pin Assignments GSM10N10DF (TO-252)FEATURES
● 100V, 9A, RDS(ON)=152mΩ@VGS=20V● Improved dv/dt capability
● Fast switching
● 100% EAS Guaranteed
● Green Device Available
● To-252 package design
APPLICATIONS
● Notebook● Load Switch
● LED applications Top View
DESCRIPTION
Gate Source Drain Ordering Information GSM10N10DF Part Number GSM10N10DF Package TO-252 Quantity Reel 2500 PCS 1 Marking InformationABSOLUTE MAXIMUM RATINGS
Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 ID@TA=25℃ Contin
