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GSM10N10DF - N-Channel MOSFET

Description

The GSM10N10DF is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.

The GSM10N10DF meet the RoHS and Green Product requirement with full function reliability approved.

Features

  • 100V, 9A, RDS(ON)=152mΩ@VGS=20V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.
  • To-252 package design.

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Datasheet Details

Part number GSM10N10DF
Manufacturer Globaltech
File Size 612.62 KB
Description N-Channel MOSFET
Datasheet download datasheet GSM10N10DF Datasheet

Full PDF Text Transcription

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GSM10N10DF 100V N-Channel MOSFETs Product Description The GSM10N10DF is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The GSM10N10DF meet the RoHS and Green Product requirement with full function reliability approved. Packages & Pin Assignments GSM10N10DF (TO-252) Features  100V, 9A, RDS(ON)=152mΩ@VGS=20V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available  To-252 package design Applications  Notebook  Load Switch  LED applications Top View Description Gate Source Drain Ordering Information GSM10N10DF Part Number GSM10N10DF Package TO-252 Quantity Reel 2500 PCS www.gs-power.
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