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GSM1912 - N-Channel Power MOSFET

Description

GSM1912, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • 20V/1.8A,RDS(ON)=280mΩ@VGS=4.5V.
  • 20V/1.5A,RDS(ON)=340mΩ@VGS=2.5V.
  • 20V/1.2A,RDS(ON)=580mΩ@VGS=1.8V.
  • Low Offset (Error) Voltage.
  • Low-Voltage Operation.
  • High-Speed Circuits.
  • Low Battery Voltage Operation.
  • SOT-363 package design.

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Datasheet Details

Part number GSM1912
Manufacturer Globaltech
File Size 951.66 KB
Description N-Channel Power MOSFET
Datasheet download datasheet GSM1912 Datasheet

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Full PDF Text Transcription

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GSM1912 20V N-Channel Enhancement Mode MOSFET Product Description GSM1912, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Packages & Pin Assignments GSM1912X6F (SOT-363) Features „ 20V/1.8A,RDS(ON)=280mΩ@VGS=4.5V „ 20V/1.5A,RDS(ON)=340mΩ@VGS=2.5V „ 20V/1.2A,RDS(ON)=580mΩ@VGS=1.
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