GSM1912 Datasheet | Globaltech

20V N-Channel Enhancement Mode MOSFET Product Description GSM1912, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications. Packages & Pin Assignments GSM1912X6F (SOT-363) Features - 20V/1.8A,RDS(ON)=280mΩ@VGS=4.5V - 20V/1.5A,RDS(ON)=340mΩ@VGS=2.5V - 20V/1.2A,RDS(ON)=580mΩ@VGS=1.8V - Low Offset (Error) Voltage - Low-Voltage Operation - High-Speed Circuits - Low Battery Voltage Operation - SOT-363 package design Applications - Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories - Battery Operated Systems - Power Supply Converter Circuits - Load/Power Switching Smart Phones, Pagers Pin Description 1 Source1 2 Gate1 3 Drain2 4 Source2 5 Gate2 6...