Globaltech GSM1912
N-Channel Power MOSFET
| Part No. | GSM1912 |
|---|---|
| Datasheet | GSM1912 Download |
| Manufacturer |  Globaltech |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
GSM1912, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Packages & Pin Assignments GSM1912X6F (SOT-363)FEATURES
20V/1.8A,RDS(ON)=280mΩ@VGS=4.5V 20V/1.5A,RDS(ON)=340mΩ@VGS=2.5V 20V/1.2A,RDS(ON)=580mΩ@VGS=1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation SOT-363 package designAPPLICATIONS
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Smart Phones, Pagers PinDESCRIPTION
1 Source1 2 Gate1 3 Drain2 4 Source2 5 Gate2 6 Drain1 GSM1
