Globaltech GSM4422
This publication supersedes and replaces all information without express written approval of Globaltech Semiconductor.| Part No. | GSM4422 |
|---|---|
| Datasheet | GSM4422 Download |
| Manufacturer |  Globaltech |
| Description | N-channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
GSM4422, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Packages & Pin Assignments GSM4422SF (SOP-8)FEATURES
● 30V/ 6.8A,RDS(ON)=36mΩ@VGS=10V● 30V/ 6.0A,RDS(ON)=42mΩ@VGS=4.5V
● 30V/ 5.2A,RDS(ON)=50mΩ@VGS=2.5V
● Super high density cell design for extremely low RDS (ON)
● SOP-8P package design
APPLICATIONS
● DC/DC Converter● Load Switch
● CCFL Inverter
● Power Management in Notebook Computer GSM4422 1 Source 5 Drain 2 Source 6 Drain 3 Source 7 Drain 4 Gate 8 Drain Ordering Information GS P/N GSM4422 S F Package Code Pb Free Code 1 Marking Information
ABSOLUTE MAXIMUM RATINGS
(TA=25ºC unless otherwise noted) Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain...
