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GSM4422 - N-channel MOSFET

General Description

GSM4422, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Key Features

  • 30V/ 6.8A,RDS(ON)=36mΩ@VGS=10V.
  • 30V/ 6.0A,RDS(ON)=42mΩ@VGS=4.5V.
  • 30V/ 5.2A,RDS(ON)=50mΩ@VGS=2.5V.
  • Super high density cell design for extremely low RDS (ON).
  • SOP-8P package design.

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Datasheet Details

Part number GSM4422
Manufacturer Globaltech
File Size 413.57 KB
Description N-channel MOSFET
Datasheet download datasheet GSM4422 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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30V N-Channel Enhancement Mode MOSFET Product Description GSM4422, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Packages & Pin Assignments GSM4422SF (SOP-8) Features  30V/ 6.8A,RDS(ON)=36mΩ@VGS=10V  30V/ 6.0A,RDS(ON)=42mΩ@VGS=4.5V  30V/ 5.2A,RDS(ON)=50mΩ@VGS=2.