GSM4600 Datasheet | Globaltech

100V N & P Pair Enhancement Mode MOSFET Product Description These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(ON) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWM DC-DC converters, power management in portable and battery powered products such as puters, printers, battery charger, telemunication power system, and telephones power system. Packages & Pin Assignments GSM4600SF(SOP-8) Features N-Channel - 100V, 9.8A, RDS(ON)=155mΩ@VGS=10V - 100V, 9.8A, RDS(ON)=175mΩ@VGS=4.5V P-Channel - -100V, -9A, RDS(ON)=160mΩ@VGS=-10V - -100V, -9A, RDS(ON)=185mΩ@VGS=-4.5V...