Datasheet4U Logo Datasheet4U.com

GSM4600 - MOSFET

General Description

These miniature surface mount MOSFETs utilize High Cell Density process.

Low RDS(ON) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry.

Key Features

  • N-Channel.
  • 100V, 9.8A, RDS(ON)=155mΩ@VGS=10V.
  • 100V, 9.8A, RDS(ON)=175mΩ@VGS=4.5V P-Channel.
  • -100V, -9A, RDS(ON)=160mΩ@VGS=-10V.
  • -100V, -9A, RDS(ON)=185mΩ@VGS=-4.5V.
  • Fast switching speed.
  • SOP-8 package design.

📥 Download Datasheet

Datasheet Details

Part number GSM4600
Manufacturer Globaltech
File Size 1.26 MB
Description MOSFET
Datasheet download datasheet GSM4600 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
GSM4 Stepper Motor Drive GerrnWich
GSM5 Stepper Motor Drive GerrnWich
GSM793E 80CH Segment Driver Syntec Semiconductor
GSM7980 Dot Matrix LCD Controller/Driver Syntec Semiconductor
GSM850 (GSM850 / GSM900) Antenna Switch Module Hitachi

Other Datasheets by Globaltech

Part Number Description
GSM4422 N-channel MOSFET
GSM4435S P-Channel MOSFET
GSM4599C MOSFET
GSM4948W P-Channel MOSFET
GSM4953WS P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GSM4600 100V N & P Pair Enhancement Mode MOSFET Product Description These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(ON) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWM DC-DC converters, power management in portable and battery powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. Packages & Pin Assignments GSM4600SF(SOP-8) Features N-Channel „ 100V, 9.8A, RDS(ON)=155mΩ@VGS=10V „ 100V, 9.8A, RDS(ON)=175mΩ@VGS=4.5V P-Channel „ -100V, -9A, RDS(ON)=160mΩ@VGS=-10V „ -100V, -9A, RDS(ON)=185mΩ@VGS=-4.