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GSM4953WS - P-Channel MOSFET

General Description

GSM4953WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Key Features

  • -30V/-5.4A,RDS(ON)=60mΩ@VGS=-10V.
  • -30V/-4.2A,RDS(ON)=80mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • SOP.
  • 8P package design.

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Datasheet Details

Part number GSM4953WS
Manufacturer Globaltech
File Size 969.08 KB
Description P-Channel MOSFET
Datasheet download datasheet GSM4953WS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GSM4953WS 30V P-Channel Enhancement Mode MOSFET Product Description GSM4953WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Features „ -30V/-5.4A,RDS(ON)=60mΩ@VGS=-10V „ -30V/-4.2A,RDS(ON)=80mΩ@VGS=-4.