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GSM4435S - P-Channel MOSFET

General Description

GSM4435S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Key Features

  • -30V/-9A,RDS(ON)=18mΩ@VGS=-10V.
  • -30V/-7A,RDS(ON)=26mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • SOP-8P package design.

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Datasheet Details

Part number GSM4435S
Manufacturer Globaltech
File Size 1.01 MB
Description P-Channel MOSFET
Datasheet download datasheet GSM4435S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GSM4435S 30V P-Channel Enhancement Mode MOSFET Product Description GSM4435S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Features „ -30V/-9A,RDS(ON)=18mΩ@VGS=-10V „ -30V/-7A,RDS(ON)=26mΩ@VGS=-4.5V „ Super high density cell design for extremely low RDS (ON) „ SOP-8P package design Applications „ LED Display „ Load Switch „ CCFL Inverter „ Power Management in Notebook Computer Packages & Pin Assignments GSM4435SSF(SOP-8P) 87 6 5 DD D D 1 2 34 S S SG Pin Pin Name Pin 1 Source 5 2 Source 6 3 Source 7 4 Gate 8 Pin Name Drain Drain Drain Drain GSM4435S www.