GSM4435S Datasheet PDF

DESCRIPTION

GSM4435S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

FEATURES

„ -30V/-9A,RDS(ON)=18mΩ@VGS=-10V „ -30V/-7A,RDS(ON)=26mΩ@VGS=-4.5V „ Super high density cell design for extremely low RDS (ON) „ SOP-8P package design

APPLICATIONS

„ LED Display „ Load Switch „ CCFL Inverter „ Power Management in Notebook Computer Packages & Pin Assignments GSM4435SSF(SOP-8P) 87 6 5 DD D D 1 2 34 S S SG Pin Pin Name Pin 1 Source 5 2 Source 6 3 Source 7 4 Gate 8 Pin Name Drain Drain Drain Drain GSM4435S 1 Ordering Information Part Number GSM4435SSF Marking Information Package SOP-8P Lot Code Date Code 4435S AAAAAA BBBBBB Quantity Reel 4000 PCS GS P/N Absolute Maximum Rat