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GSMDC3908X - N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • 30V, 60A, RDS(ON)=8.5mΩ@VGS=10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS guaranteed.
  • Green Device Available.
  • DFN5X6-8L package design.

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Datasheet Details

Part number GSMDC3908X
Manufacturer Globaltech
File Size 506.01 KB
Description N-Channel MOSFET
Datasheet download datasheet GSMDC3908X Datasheet

Full PDF Text Transcription for GSMDC3908X (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for GSMDC3908X. For precise diagrams, and layout, please refer to the original PDF.

GSMDC3908X 30V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced techn...

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fect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features „ 30V, 60A, RDS(ON)=8.

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