Datasheet4U Logo Datasheet4U.com

GSMDC3908X - N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 30V, 60A, RDS(ON)=8.5mΩ@VGS=10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS guaranteed.
  • Green Device Available.
  • DFN5X6-8L package design.

📥 Download Datasheet

Datasheet preview – GSMDC3908X

Datasheet Details

Part number GSMDC3908X
Manufacturer Globaltech
File Size 506.01 KB
Description N-Channel MOSFET
Datasheet download datasheet GSMDC3908X Datasheet
Additional preview pages of the GSMDC3908X datasheet.

📁 Similar Datasheet

  • GSM4 - Stepper Motor Drive (GerrnWich)
  • GSM5 - Stepper Motor Drive (GerrnWich)
  • GSM793E - 80CH Segment Driver (Syntec Semiconductor)
  • GSM7980 - Dot Matrix LCD Controller/Driver (Syntec Semiconductor)
  • GSM850 - (GSM850 / GSM900) Antenna Switch Module (Hitachi)
  • GSM850 - (GSM850 / GSM900) Antenna Switch Module (Kyocera)
  • GSM900 - (GSM850 / GSM900) Antenna Switch Module (Hitachi)
  • GSM900 - (GSM850 / GSM900) Antenna Switch Module (Kyocera)
  • GSMBD2004 - SWITCHING DIODE (GTM)
  • GSMBD4148 - SWITCHING DIODE (GTM)
Other Datasheets by Globaltech

Full PDF Text Transcription

Click to expand full text
GSMDC3908X 30V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features „ 30V, 60A, RDS(ON)=8.
Published: |