DESCRIPTION
These Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology. FEATURES
20V, 30A, RDS(ON)=12mΩ@VGS=10V Improved dv/dt capability ESD Protection Diode Embedded 100% EAS guaranteed Green Device Available DFN3X3-8L package design APPLICATIONS
MB / VGA / Vcore POL APPLICATIONS
SMPS 2nd SR Li-Battery Protection Packages & Pin Assignments GSMDEC2210VFF (DFN3X3-8L) GSMDEC2210V Top View Pin DESCRIPTION
1 Source 1 2 Gate 1 3 Source 2 4 Gate 2 5 Drain 2 6 Drain 2 7 Drain 1 8 Drain 1 1 Ordering Information Part Number GSMDEC2210VFF Marking Information Package DFN3X3-8L
Globaltech
