Datasheet Details
| Part number | GSMDEC2210V |
|---|---|
| Manufacturer | Globaltech |
| File Size | 505.44 KB |
| Description | Dual N-Channel MOSFET |
| Download | GSMDEC2210V Download (PDF) |
|
|
| Part number | GSMDEC2210V |
|---|---|
| Manufacturer | Globaltech |
| File Size | 505.44 KB |
| Description | Dual N-Channel MOSFET |
| Download | GSMDEC2210V Download (PDF) |
|
|
|
These Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
GSMDEC2210V 20V Dual N-Channel MOSFETs Product.
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