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GSMDEW2206 - Dual N-Channel MOSFET

Description

These Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 20V, 10A, RDS(ON)=8.5mΩ@VGS=4.5V.
  • Improved dv/dt capability.
  • Fast switching.
  • Suit for 1.8V Gate Drive.

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Datasheet Details

Part number GSMDEW2206
Manufacturer Globaltech
File Size 491.61 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet GSMDEW2206 Datasheet

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Full PDF Text Transcription

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GSMDEW2206 20V Dual N-Channel MOSFETs Product Description These Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features „ 20V, 10A, RDS(ON)=8.5mΩ@VGS=4.5V „ Improved dv/dt capability „ Fast switching „ Suit for 1.
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