DESCRIPTION
These Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology. FEATURES
20V, 10A, RDS(ON)=8.5mΩ@VGS=4.5V Improved dv/dt capability Fast switching Suit for 1.8V Gate Drive APPLICATIONS
G-S ESD protection diode embedded Green Device Available TSSOP-8 package design APPLICATIONS
Notebook Load Switch LED applications Packages & Pin Assignments GSMDEW2206TSSF (TSSOP-8) GSMDEW2206 Top View Pin DESCRIPTION
1 Drain 1/2 2 Source 1 3 Source 1 4 Gate 1 5 Gate 2 6 Source 2 7 Source 2 8 Drain 1/2 1 Ordering Information GS P/N GSMDEW2206 TSS F Package Code Pb Free Code Part
Globaltech
