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GSMDK2314 - N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 20V, 5.6A, RDS(ON)=26mΩ@VGS=4.5V.
  • Improved dv/dt capability.
  • Fast switching.
  • Suit for 1.8V Gate Drive.

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Datasheet Details

Part number GSMDK2314
Manufacturer Globaltech
File Size 490.54 KB
Description N-Channel MOSFET
Datasheet download datasheet GSMDK2314 Datasheet

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Full PDF Text Transcription

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GSMDK2314 20V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features „ 20V, 5.6A, RDS(ON)=26mΩ@VGS=4.5V „ Improved dv/dt capability „ Fast switching „ Suit for 1.8V Gate Drive Applications „ Green Device Available „ SOT-89 package design Applications „ Notebook „ Load Switch „ Hand-Held Instruments Packages & Pin Assignments GSMDK2314YF (SOT-89) Pin Description 1 Gate 2 Drain 3 Source Ordering Information GSMDK2314 www.
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