DESCRIPTION
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. FEATURES
20V, 11A, RDS(ON)=8.2mΩ@VGS=4.5V Improved dv/dt capability Fast switching G-S ESD Protection Diode Embedded Green Device Available DFN2X3-6L package design APPLICATIONS
Handheld Instruments POL APPLICATIONS
Battery Protection APPLICATIONS
Packages & Pin Assignments GSMEB2516QFF (DFN2X3-6L) Bottom View Pin DESCRIPTION
1 Source 1 2 Source 1 3 Gate 1 4 Gate 2 5 Source 2 6 Source 2 GSMEB2516Q 1 Ordering Information GS P/N GSMEB2516Q F F Package Code Pb Free Code Part Number GSMEB2516QFF Package DFN2X
Globaltech
