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GSMEB2516Q - Dual N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 20V, 11A, RDS(ON)=8.2mΩ@VGS=4.5V.
  • Improved dv/dt capability.
  • Fast switching.
  • G-S ESD Protection Diode Embedded.
  • Green Device Available.
  • DFN2X3-6L package design.

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Datasheet Details

Part number GSMEB2516Q
Manufacturer Globaltech
File Size 481.61 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet GSMEB2516Q Datasheet

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Full PDF Text Transcription

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GSMEB2516Q 20V Dual N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features „ 20V, 11A, RDS(ON)=8.2mΩ@VGS=4.
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