GSMEB2516Q Datasheet | Globaltech

20V Dual N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. Features - 20V, 11A, RDS(ON)=8.2mΩ@VGS=4.5V - Improved dv/dt capability - Fast switching - G-S ESD Protection Diode Embedded - Green Device Available - DFN2X3-6L package design Applications - Handheld Instruments - POL Applications - Battery Protection Applications Packages & Pin Assignments GSMEB2516QFF (DFN2X3-6L) Bottom View Pin Description 1 Source 1 2 Source 1 3 Gate 1 4 Gate 2 5 Source 2 6 Source 2 .gs-power. 1 Ordering Information GS P/N GSMEB2516Q F F Package Code Pb Free Code Part Number GSMEB2516QFF Package DFN2X...