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GSMEB2516Q Datasheet Dual N-Channel MOSFET

Manufacturer: Globaltech

Datasheet Details

Part number GSMEB2516Q
Manufacturer Globaltech
File Size 481.61 KB
Description Dual N-Channel MOSFET
Download GSMEB2516Q Download (PDF)

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency fast switching applications.

Overview

GSMEB2516Q 20V Dual N-Channel MOSFETs Product.

Key Features

  • 20V, 11A, RDS(ON)=8.2mΩ@VGS=4.5V.
  • Improved dv/dt capability.
  • Fast switching.
  • G-S ESD Protection Diode Embedded.
  • Green Device Available.
  • DFN2X3-6L package design.