GSMF08N60M Datasheet | Globaltech

600V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using advanced super junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supply. Features - 600V, 7.5A, RDS(ON)=1.2Ω@VGS=10V - Improved dv/dt capability - Fast switching - Green Device Available - TO-220F package design Applications - High efficient switched mode power supplies - TV / Monitor - Adapter / charger - Server Power - PV Inverter / UPS Packages & Pin Assignments GSMF08N60MTF (TO-220F) Top View Pin Description 1 Gate 2 Drain 3 Source .gs-power. 1 Ordering Information GS P/N GSMF08N60M T F Package Code Pb Free Code Part Number GSMF08N60MTF Package TO-220F Quantity Tube 50...