GSMF08N60M Overview
These N-Channel enhancement mode power field effect transistors are using advanced super junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supply.
GSMF08N60M Key Features
- 600V, 7.5A, RDS(ON)=1.2Ω@VGS=10V
- Improved dv/dt capability
- Fast switching
- Green Device Available
- TO-220F package design