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GSMF08N60M - N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using advanced super junction technology.

Features

  • 600V, 7.5A, RDS(ON)=1.2Ω@VGS=10V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.
  • TO-220F package design.

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Datasheet Details

Part number GSMF08N60M
Manufacturer Globaltech
File Size 452.18 KB
Description N-Channel MOSFET
Datasheet download datasheet GSMF08N60M Datasheet

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Full PDF Text Transcription

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GSMF08N60M 600V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using advanced super junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. Features  600V, 7.5A, RDS(ON)=1.
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