GPT15N65
GPT15N65 is POWER FIELD EFFECT TRANSISTOR manufactured by Greatpower.
DESCRIPTION
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and mutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and mutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.
PIN CONFIGURATION
TO-220F
TO-3P/T-O247
Top View
Top View
FEATURES
- Robust High Voltage Termination
- Avalanche Energy Specified
- Source-to-Drain Diode Recovery Time parable to a
Discrete Fast Recovery Diode
- Diode is...
