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2SD1733 - Power Transistor

Key Features

  • High VCEO, VCEO=80V . High IC, IC=1A (DC) . Good hFE linearity . +0.2 9.70 -0.2 Transistors TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 Low VCE (sat) . Epitaxial planer type NPN silicon transistor +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter v.

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Datasheet Details

Part number 2SD1733
Manufacturer Guangdong Kexin Industrial
File Size 69.40 KB
Description Power Transistor
Datasheet download datasheet 2SD1733 Datasheet

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www.DataSheet4U.com SMD Type Power Transistor 2SD1733 Features High VCEO, VCEO=80V . High IC, IC=1A (DC) . Good hFE linearity . +0.2 9.70 -0.2 Transistors TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 Low VCE (sat) . Epitaxial planer type NPN silicon transistor +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Tc = 25 Junction temperature Storage temperature * Pw=20ms.