+0.1 2.50-0.1
Low VCE(sat). Excellent DC current gain characteristics. NPN silicon transistor. +0.1 0.48-0.1
1
2
3
+0.1 0.80-0.1
+0.1 0.53-0.1 +0.1 0.44-0.1
2.60
+0.1 -0.1
+0.1 4.00-0.1
+0.1 3.00-0.1
0.40
1. Base 2. Collector 3. Emiitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 40 20 6.
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SMD Type
Low Frequency Transistor 2SD2150
Transistors
SOT-89
4.50
+0.1 -0.1
Unit: mm 1.50
+0.1 -0.1
+0.1 1.80-0.1
Features
+0.1 2.50-0.1
Low VCE(sat). Excellent DC current gain characteristics. NPN silicon transistor.
+0.1 0.48-0.1
1
2
3
+0.1 0.80-0.1
+0.1 0.53-0.1 +0.1 0.44-0.1
2.60
+0.1 -0.1
+0.1 4.00-0.1
+0.1 3.00-0.1
0.40
1. Base 2. Collector 3. Emiitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 40 20 6 3 0.